We demonstrate a new mechanism for polarization switching in slightly anisotropic vertical-cavity
surface-emitting lasers (VCSEL's) based on index guiding due to the effect of thermal …

A semiconductor laser with a strongly asymmetric waveguide structure and a relatively thick
($\sim$0.1 $\mu$m) active layer, resulting in an extremely large equivalent spot size, is …

This paper discusses the construction principles and performance of a pulsed time-of-flight (TOF)
laser radar based on high-speed (FWHM ~100 ps) and high-energy (~1 nJ) optical …

A multiple quantum well laser diode utilizing an asymmetric waveguide structure with a
large equivalent spot size of ~3 μm is shown to give high energy (~1 nJ) and short (~100 ps) …

A simplest saturable absorber, in the form of an unpumped section, is introduced into a
Fabry-Perot semiconductor laser with a strongly asymmetric broadened waveguide structure …

It is shown, by calculations calibrated against the authors' recent experimental data, that an
eye-safe wavelength range InGaAsP/InP high pulsed power laser design using a bulk active …

The effect of longitudinal spatial hole burning on the performance of a semiconductor laser
with a strongly asymmetric resonator is investigated numerically. The effects of spatial hole …

We report first experimental results on a high-power pulsed semiconductor laser operating
in the eye-safe spectral range (wavelength around 1.5 μm) with an asymmetric waveguide …

An asymmetric waveguide laser diode with a thick active layer operated with enhanced gain
switching is shown to be able to produce∼ 100 ps,∼ 25 W optical pulses in fundamental …

It is theoretically shown that gain switching quantum well AlGaAs/InGaAs laser with a very
large ratio of active layer thickness to optical confinement factor (∼ 8 µm) can result in single, …